In IGBT/SiC power modules, the ceramic substrate that carries the chips simultaneously fulfills multiple roles, including mechanical support, electrical interconnection, and heat dissipation. Owing to their significant performance advantages, AMB (Active Metal Brazing) ceramic substrates are gradually replacing DBC (Direct Bonded Copper) ceramic substrates in many high-reliability application fields, becoming a core material in aerospace, new energy vehicles, industrial applications, and other sectors, with promising development prospects.
As power semiconductors continue to evolve toward higher power density and greater reliability, the material system and interfacial structure are becoming key factors that determine the upper limits of performance and the boundaries of cost. For SiC devices operating under high-voltage and high-temperature conditions, conventional Ag-Cu-Ti-based AMB substrates suffer from drawbacks such as silver migration failure and cost volatility. Under the long-life and high-reliability service requirements of high-power devices used in 800V automotive platforms for new energy vehicles, rail transit, and power grids, balancing cost and reliability has become a primary direction for optimization among major manufacturers.
The rapid development of the semiconductor and electronic information industries has imposed higher performance requirements on core materials. As key foundational materials with multifunctional coupling characteristics-including electrical, magnetic, thermal, and mechanical properties-electronic ceramics are widely used in core components such as capacitors, filters, sensors, and packaging substrates. Among these, ceramic substrates represent an important product form of electronic ceramics in power semiconductor packaging, and their thermal conductivity, mechanical strength, reliability, and precision directly determine the performance and lifespan of end products.